Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92
- RS-artikelnummer:
- 239-5618P
- Tillv. art.nr:
- TN5325K1-G
- Tillverkare / varumärke:
- Microchip
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Antal 50 enheter (levereras på en bricka)*
270,15 kr
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337,70 kr
(inkl. moms)
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- Dessutom levereras 2 100 enhet(er) från den 02 februari 2026
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Enheter | Per enhet |
|---|---|
| 50 - 75 | 5,403 kr |
| 100 - 225 | 5,058 kr |
| 250 - 975 | 4,964 kr |
| 1000 + | 4,861 kr |
*vägledande pris
- RS-artikelnummer:
- 239-5618P
- Tillv. art.nr:
- TN5325K1-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TN5325 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TN5325 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns