Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92
- RS-artikelnummer:
- 236-8961
- Tillv. art.nr:
- VP0106N3-G
- Tillverkare / varumärke:
- Microchip
Antal (1 påse med 1000 enheter)*
7 862,00 kr
(exkl. moms)
9 828,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 09 oktober 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Påse* |
|---|---|---|
| 1000 + | 7,862 kr | 7 862,00 kr |
*vägledande pris
- RS-artikelnummer:
- 236-8961
- Tillv. art.nr:
- VP0106N3-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | VP0106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series VP0106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
relaterade länkar
- Microchip VP0106 Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-92 VP0106N3-G
- Microchip VP0109 Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-92 VP0109N3-G
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-92
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-92 ZVP3310A
- Microchip VP3203 Type P-Channel MOSFET 3-Pin TO-92 VP3203N3-G
- Microchip LP0701 Type P-Channel MOSFET 3-Pin TO-92 LP0701N3-G
- Microchip Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-92
- Microchip Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-92