Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23
- RS-artikelnummer:
- 236-3578P
- Tillv. art.nr:
- SSM3K339R,LF(T
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal 200 enheter (levereras i en rulle)*
102,60 kr
(exkl. moms)
128,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 17 900 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 200 - 200 | 0,513 kr |
| 300 - 400 | 0,503 kr |
| 500 - 900 | 0,493 kr |
| 1000 + | 0,472 kr |
*vägledande pris
- RS-artikelnummer:
- 236-3578P
- Tillv. art.nr:
- SSM3K339R,LF(T
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.9 mm | |
| Height | 0.8mm | |
| Length | 2.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.9 mm | ||
Height 0.8mm | ||
Length 2.4mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C