Toshiba Type P-Channel MOSFET, 3.5 A, 60 V, 3-Pin SOT-23 SSM3J351R,LF(T
- RS-artikelnummer:
- 236-3571P
- Tillv. art.nr:
- SSM3J351R,LF(T
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal 100 enheter (levereras på en kontinuerlig remsa)*
319,00 kr
(exkl. moms)
399,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 650 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 100 - 200 | 3,19 kr |
| 250 - 450 | 3,129 kr |
| 500 - 950 | 3,062 kr |
| 1000 + | 2,874 kr |
*vägledande pris
- RS-artikelnummer:
- 236-3571P
- Tillv. art.nr:
- SSM3J351R,LF(T
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 129mΩ | |
| Typical Gate Charge Qg @ Vgs | 15.1nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 2.4mm | |
| Width | 2.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 129mΩ | ||
Typical Gate Charge Qg @ Vgs 15.1nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 2.4mm | ||
Width 2.9 mm | ||
Automotive Standard AEC-Q101 | ||
The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C