STMicroelectronics STHU36N Type N-Channel MOSFET, 29 A, 600 V, 7-Pin HU3PAK STHU36N60DM6AG
- RS-artikelnummer:
- 234-8898P
- Tillv. art.nr:
- STHU36N60DM6AG
- Tillverkare / varumärke:
- STMicroelectronics
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392,00 kr
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Enheter | Per enhet |
|---|---|
| 10 - 99 | 39,20 kr |
| 100 - 249 | 38,19 kr |
| 250 - 499 | 37,18 kr |
| 500 + | 36,29 kr |
*vägledande pris
- RS-artikelnummer:
- 234-8898P
- Tillv. art.nr:
- STHU36N60DM6AG
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STHU36N | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Maximum Power Dissipation Pd | 210W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STHU36N | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Maximum Power Dissipation Pd 210W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested