onsemi NTMC0 2 Type P-Channel MOSFET, 4.5 A, 100 V Enhancement, 8-Pin SOIC NTMC083NP10M5L
- RS-artikelnummer:
- 230-9092
- Tillv. art.nr:
- NTMC083NP10M5L
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
58,69 kr
(exkl. moms)
73,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- 12 310 kvar, redo att levereras
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 5,869 kr | 58,69 kr |
| 100 - 240 | 5,062 kr | 50,62 kr |
| 250 - 490 | 4,39 kr | 43,90 kr |
| 500 - 990 | 3,853 kr | 38,53 kr |
| 1000 + | 3,685 kr | 36,85 kr |
*vägledande pris
- RS-artikelnummer:
- 230-9092
- Tillv. art.nr:
- NTMC083NP10M5L
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | NTMC0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 83mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series NTMC0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 83mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ON Semiconductor dual n-channel and P- channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion.
Small Footprint (5 x 6 mm) for Compact Design
Low conduction loss
Low RDS(on) to Minimize Conduction Losses
Standard footprint
Low QG and Capacitance to Minimize Driver Losses
The Part is Not ESD Protected
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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