onsemi Type N-Channel MOSFET, 135 A, 150 V N, 8-Pin DFN NTMTS6D0N15MC
- RS-artikelnummer:
- 229-6487
- Tillv. art.nr:
- NTMTS6D0N15MC
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
127,12 kr
(exkl. moms)
158,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 2 970 enhet(er) levereras från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 63,56 kr | 127,12 kr |
| 20 - 198 | 54,77 kr | 109,54 kr |
| 200 - 998 | 47,49 kr | 94,98 kr |
| 1000 - 1998 | 41,72 kr | 83,44 kr |
| 2000 + | 38,025 kr | 76,05 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6487
- Tillv. art.nr:
- NTMTS6D0N15MC
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.2 mm | |
| Length | 8.1mm | |
| Height | 8.5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.2 mm | ||
Length 8.1mm | ||
Height 8.5mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
Minimize conduction losses
High peak current and low parasitic inductance
Offers a wider design margin for thermally challenged applications
Reduces switching spike
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