onsemi UniFET II Type N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223 FDT4N50NZU
- RS-artikelnummer:
- 229-6327
- Tillv. art.nr:
- FDT4N50NZU
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
105,06 kr
(exkl. moms)
131,32 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 710 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 10,506 kr | 105,06 kr |
| 100 - 240 | 9,061 kr | 90,61 kr |
| 250 - 490 | 7,851 kr | 78,51 kr |
| 500 - 990 | 6,91 kr | 69,10 kr |
| 1000 + | 6,272 kr | 62,72 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6327
- Tillv. art.nr:
- FDT4N50NZU
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | UniFET II | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.7mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series UniFET II | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.7mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.
Ultra low gate charge
100% avalanche tested
Pb−free
Halogen free
RoHS compliant
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