Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

RS-artikelnummer:: 229-1830
Tillv. art.nr:: IPC50N04S55R8ATMA1
Tillverkare / varumärke:: Infineon

Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

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Antal (1 förpackning med 15 enheter)*

70,605 kr

(exkl. moms)

88,26 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
15 - 60	4,707 kr	70,61 kr
75 - 135	4,473 kr	67,10 kr
150 - 360	4,286 kr	64,29 kr
375 - 735	4,099 kr	61,49 kr
750 +	3,815 kr	57,23 kr

*vägledande pris

RS-artikelnummer:: 229-1830
Tillv. art.nr:: IPC50N04S55R8ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO
	Series	IPC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	42W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Length	5.25mm
	Width	5.58 mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO
	Series IPC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 42W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Length 5.25mm
	Width 5.58 mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPC50N04S55R8ATMA1

40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6

Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.

All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.

Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.

Summary of Features

•OptiMOS™ - power MOSFET for automotive applications

•N-channel - Enhancement mode - Normal Level

•AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green Product (RoHS compliant)

•100% Avalanche tested

Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

GRATIS leverans för online beställningar över 500,00 kr

40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6

Summary of Features

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