Vishay TrenchFET Type N-Channel MOSFET, 30 A, 40 V Enhancement, 3-Pin TO-252 SQD40052EL_GE3
- RS-artikelnummer:
- 228-2948
- Tillv. art.nr:
- SQD40052EL_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
102,26 kr
(exkl. moms)
127,82 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 690 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 10,226 kr | 102,26 kr |
| 100 - 240 | 9,61 kr | 96,10 kr |
| 250 - 490 | 8,691 kr | 86,91 kr |
| 500 - 990 | 8,187 kr | 81,87 kr |
| 1000 + | 7,672 kr | 76,72 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2948
- Tillv. art.nr:
- SQD40052EL_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 34.5nC | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 34.5nC | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 40 V power MOSFET.
100 % Rg and UIS tested
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