STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK
- RS-artikelnummer:
- 224-9999P
- Tillv. art.nr:
- SCTH35N65G2V-7AG
- Tillverkare / varumärke:
- STMicroelectronics
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- Slutlig(a) 38 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 5 - 9 | 154,45 kr |
| 10 - 24 | 144,37 kr |
| 25 - 49 | 140,90 kr |
| 50 + | 137,20 kr |
*vägledande pris
- RS-artikelnummer:
- 224-9999P
- Tillv. art.nr:
- SCTH35N65G2V-7AG
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 3.3V | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.25mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 3.3V | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.25mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency