ROHM Dual 2 Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- RS-artikelnummer:
- 223-6398
- Tillv. art.nr:
- UT6JC5TCR
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
107,85 kr
(exkl. moms)
134,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 4,314 kr | 107,85 kr |
| 50 - 75 | 4,229 kr | 105,73 kr |
| 100 - 225 | 3,015 kr | 75,38 kr |
| 250 - 975 | 2,957 kr | 73,93 kr |
| 1000 + | 2,536 kr | 63,40 kr |
*vägledande pris
- RS-artikelnummer:
- 223-6398
- Tillv. art.nr:
- UT6JC5TCR
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.65mm | |
| Width | 2 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.65mm | ||
Width 2 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM small signal MOSFET has DFN1010-3W package type. It is mainly used for switching circuits, high side loadswitch and relay driver.
Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package
Side wettable Flanks for automated optical solder inspection
AEC-Q101 qualified
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