Infineon CoolMOS Type N-Channel MOSFET, 77.5 A, 650 V Enhancement, 3-Pin TO-247

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Antal (1 rör med 30 enheter)*

2 314,95 kr

(exkl. moms)

2 893,68 kr

(inkl. moms)

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  • Dessutom levereras 330 enhet(er) från den 29 december 2025
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Enheter
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Per Rør*
30 - 3077,165 kr2 314,95 kr
60 - 12073,307 kr2 199,21 kr
150 +68,677 kr2 060,31 kr

*vägledande pris

RS-artikelnummer:
222-4720
Tillv. art.nr:
IPW60R041P6FKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

77.5A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

481W

Height

5.21mm

Length

16.13mm

Width

21.1 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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