ROHM Dual SP8K41 2 Type N-Channel MOSFET, 3.4 A, 80 V Enhancement, 8-Pin SOP SP8K41HZGTB
- RS-artikelnummer:
- 222-4374
- Tillv. art.nr:
- SP8K41HZGTB
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
143,92 kr
(exkl. moms)
179,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 3 945 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 28,784 kr | 143,92 kr |
| 50 - 95 | 25,178 kr | 125,89 kr |
| 100 - 245 | 22,356 kr | 111,78 kr |
| 250 - 995 | 20,16 kr | 100,80 kr |
| 1000 + | 19,78 kr | 98,90 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4374
- Tillv. art.nr:
- SP8K41HZGTB
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SP8K41 | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 6.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 6 mm | |
| Height | 1.75mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SP8K41 | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 6.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 6 mm | ||
Height 1.75mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The ROHM SP8K41HZG n automotive grade MOSFET that EC-Q101 qualified. Two Nch 80V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications.
Low on-resistance
Small Surface Mount Package (SOP8)
Pb-free lead plating ; RoHS compliant
Halogen Free
Sn100% plating
AEC-Q101 Qualified
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