DiodesZetex DMT Type N-Channel MOSFET, 14.1 A, 30 V Enhancement, 6-Pin UDFN
- RS-artikelnummer:
- 222-2865
- Tillv. art.nr:
- DMT3006LFDFQ-7
- Tillverkare / varumärke:
- DiodesZetex
Antal (1 rulle med 3000 enheter)*
5 145,00 kr
(exkl. moms)
6 432,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 6 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 1,715 kr | 5 145,00 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2865
- Tillv. art.nr:
- DMT3006LFDFQ-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMT | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Height | 0.63mm | |
| Standards/Approvals | No | |
| Width | 2.05 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMT | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Height 0.63mm | ||
Standards/Approvals No | ||
Width 2.05 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
relaterade länkar
- DiodesZetex DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN DMT3006LFDFQ-7
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 6-Pin UDFN
- DiodesZetex DMT Type N-Channel MOSFET 50 V Enhancement, 6-Pin UDFN
- DiodesZetex DMT Type N-Channel MOSFET 50 V Enhancement, 6-Pin UDFN DMT5015LFDF-7
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 6-Pin UDFN DMT6030LFCL-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020 DMT3020LFDBQ-7
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333