DiodesZetex DMP Type P-Channel MOSFET, 500 mA, 20 V Enhancement, 3-Pin SOT-523 DMP2900UT-7
- RS-artikelnummer:
- 222-2856
- Tillv. art.nr:
- DMP2900UT-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
23,75 kr
(exkl. moms)
29,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 500 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 50 | 0,475 kr | 23,75 kr |
| 100 - 200 | 0,24 kr | 12,00 kr |
| 250 - 450 | 0,235 kr | 11,75 kr |
| 500 - 950 | 0,213 kr | 10,65 kr |
| 1000 + | 0,208 kr | 10,40 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2856
- Tillv. art.nr:
- DMP2900UT-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-523 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.32W | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-523 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.32W | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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