DiodesZetex DMN Type N-Channel MOSFET, 4.6 A, 30 V Enhancement, 3-Pin X4-DSN DMN3061LCA3-7
- RS-artikelnummer:
- 222-2838
- Tillv. art.nr:
- DMN3061LCA3-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
36,925 kr
(exkl. moms)
46,15 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 januari 2027
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 475 | 1,477 kr | 36,93 kr |
| 500 - 975 | 1,434 kr | 35,85 kr |
| 1000 - 2475 | 1,402 kr | 35,05 kr |
| 2500 - 4975 | 1,362 kr | 34,05 kr |
| 5000 + | 1,33 kr | 33,25 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2838
- Tillv. art.nr:
- DMN3061LCA3-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X4-DSN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Power Dissipation Pd | 1.88W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.22mm | |
| Length | 0.64mm | |
| Width | 1.04 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X4-DSN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Power Dissipation Pd 1.88W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.22mm | ||
Length 0.64mm | ||
Width 1.04 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
Low Qg & Qgd
Small Footprint
Low Profile 0.20mm Height
Totally Lead-Free & Fully RoHS Compliant
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