DiodesZetex 2N7002 Type N-Channel MOSFET, 292 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002EQ-7-F
- RS-artikelnummer:
- 222-2694
- Tillv. art.nr:
- 2N7002EQ-7-F
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
21,90 kr
(exkl. moms)
27,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 3 450 enhet(er) är redo att levereras
- Dessutom levereras 1 600 enhet(er) från den 23 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 50 | 0,438 kr | 21,90 kr |
| 100 - 200 | 0,428 kr | 21,40 kr |
| 250 - 450 | 0,414 kr | 20,70 kr |
| 500 - 950 | 0,403 kr | 20,15 kr |
| 1000 + | 0,396 kr | 19,80 kr |
*vägledande pris
- RS-artikelnummer:
- 222-2694
- Tillv. art.nr:
- 2N7002EQ-7-F
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 292mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 0.7W | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 292mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 0.7W | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
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