onsemi NTMFS1D7N Type N-Channel MOSFET, 170 A, 30 V Enhancement, 5-Pin DFN NTMFS1D7N03CGT1G
- RS-artikelnummer:
- 221-6730
- Tillv. art.nr:
- NTMFS1D7N03CGT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
90,50 kr
(exkl. moms)
113,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 14 september 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 9,05 kr | 90,50 kr |
| 100 - 240 | 7,795 kr | 77,95 kr |
| 250 - 490 | 6,765 kr | 67,65 kr |
| 500 - 990 | 5,936 kr | 59,36 kr |
| 1000 + | 5,398 kr | 53,98 kr |
*vägledande pris
- RS-artikelnummer:
- 221-6730
- Tillv. art.nr:
- NTMFS1D7N03CGT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTMFS1D7N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.74mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 87W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 1.1 mm | |
| Length | 5.3mm | |
| Height | 6.3mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTMFS1D7N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.74mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 87W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 1.1 mm | ||
Length 5.3mm | ||
Height 6.3mm | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 170 A of drain current with single N−channel. It improve inrush current management and improve system efficiency.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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