Infineon StrongIRFET Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 3-Pin ISOMETRIC IRF6613TRPBF
- RS-artikelnummer:
- 220-7474
- Tillv. art.nr:
- IRF6613TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
140,51 kr
(exkl. moms)
175,64 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 9 455 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 28,102 kr | 140,51 kr |
| 25 - 45 | 25,29 kr | 126,45 kr |
| 50 - 120 | 23,61 kr | 118,05 kr |
| 125 - 245 | 21,93 kr | 109,65 kr |
| 250 + | 14,044 kr | 70,22 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7474
- Tillv. art.nr:
- IRF6613TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | StrongIRFET | |
| Package Type | ISOMETRIC | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1V | |
| Height | 0.68mm | |
| Width | 5.05 mm | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series StrongIRFET | ||
Package Type ISOMETRIC | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1V | ||
Height 0.68mm | ||
Width 5.05 mm | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 NH) inductance package
Wide availability from distribution partners
Industry standard qualification level
High current carrying capability
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly
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