Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252 IPD65R190C7ATMA1

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107,52 kr

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134,40 kr

(inkl. moms)

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5 +21,504 kr107,52 kr

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Förpackningsalternativ:
RS-artikelnummer:
220-7409
Tillv. art.nr:
IPD65R190C7ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS C7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72mW

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

650V voltage

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

12 years manufacturing experience in super junction technology

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Outstanding Cool MOS™ quality

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