Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 650 V N, 3-Pin TO-220 IPAW60R360P7SXKSA1
- RS-artikelnummer:
- 218-3017
- Tillv. art.nr:
- IPAW60R360P7SXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
198,795 kr
(exkl. moms)
248,49 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 375 enhet(er) från den 25 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 13,253 kr | 198,80 kr |
| 75 - 135 | 12,589 kr | 188,84 kr |
| 150 - 360 | 12,059 kr | 180,89 kr |
| 375 - 735 | 11,529 kr | 172,94 kr |
| 750 + | 10,737 kr | 161,06 kr |
*vägledande pris
- RS-artikelnummer:
- 218-3017
- Tillv. art.nr:
- IPAW60R360P7SXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | N | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode N | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
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