Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 217-2571
Tillv. art.nr:: IPP80R900P7XKSA1
Tillverkare / varumärke:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220

Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

760,05 kr

(exkl. moms)

950,05 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

400 enhet(er) är redo att levereras

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Enheter	Per enhet	Per Rør*
50 - 50	15,201 kr	760,05 kr
100 - 200	12,313 kr	615,65 kr
250 - 450	11,552 kr	577,60 kr
500 - 950	10,945 kr	547,25 kr
1000 +	10,488 kr	524,40 kr

*vägledande pris

RS-artikelnummer:: 217-2571
Tillv. art.nr:: IPP80R900P7XKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	45W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Operating Temperature	150°C
	Height	29.95mm
	Standards/Approvals	No
	Length	10.36mm
	Width	4.57 mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 45W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Operating Temperature 150°C
	Height 29.95mm
	Standards/Approvals No
	Length 10.36mm
	Width 4.57 mm
	Automotive Standard No

Datasheet - IPP80R900P7XKSA1

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss

Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220

GRATIS leverans för online beställningar över 500,00 kr

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