Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK

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44 436,00 kr

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55 545,00 kr

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3000 +14,812 kr44 436,00 kr

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RS-artikelnummer:
217-2537
Tillv. art.nr:
IPL60R125P7AUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

600V

Package Type

ThinPAK

Series

IPL

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

111W

Maximum Operating Temperature

150°C

Height

1.1mm

Width

8.8 mm

Length

8.8mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Suitable for hard and soft switching(PFC and LLC)due to an outstanding  commutation ruggedness

Significant reduction of switching and conduction losses

Excellent ESD robustness > 2kV (HBM) for all products

Better RDS(on)/package products compared to competition enabled by a

low RDS(on)*A(below1Ohm*mm²)

Fully qualified acc. JEDEC for Industrial Applications

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