Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252

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Antal (1 rulle med 2500 enheter)*

13 082,50 kr

(exkl. moms)

16 352,50 kr

(inkl. moms)

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  • Dessutom levereras 2 500 enhet(er) från den 19 januari 2026
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2500 +5,233 kr13 082,50 kr

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RS-artikelnummer:
217-2525
Tillv. art.nr:
IPD60R400CEAUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

41W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

9.4nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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