Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 73 A, 30 V Enhancement, 8-Pin PDFN56 TSM080N03PQ56

Mängdrabatt möjlig

Antal (1 förpackning med 50 enheter)*

547,25 kr

(exkl. moms)

684,05 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 4 950 enhet(er), redo att levereras
Enheter
Per enhet
Per förpackning*
50 - 5010,945 kr547,25 kr
100 - 2009,838 kr491,90 kr
250 - 4509,641 kr482,05 kr
500 - 9508,964 kr448,20 kr
1000 +8,765 kr438,25 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
216-9674
Tillv. art.nr:
TSM080N03PQ56
Tillverkare / varumärke:
Taiwan Semiconductor
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

73A

Maximum Drain Source Voltage Vds

30V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

155°C

Width

5 mm

Height

1mm

Length

6mm

Standards/Approvals

IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

relaterade länkar