Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 75 A, 40 V Enhancement, 8-Pin PDFN56 TSM070NB04CR
- RS-artikelnummer:
- 216-9668
- Tillv. art.nr:
- TSM070NB04CR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
421,00 kr
(exkl. moms)
526,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 5 000 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 16,84 kr | 421,00 kr |
| 50 - 75 | 16,536 kr | 413,40 kr |
| 100 - 225 | 15,156 kr | 378,90 kr |
| 250 - 975 | 14,869 kr | 371,73 kr |
| 1000 + | 13,79 kr | 344,75 kr |
*vägledande pris
- RS-artikelnummer:
- 216-9668
- Tillv. art.nr:
- TSM070NB04CR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2011/65/EU and in accordance to WEEE 2002/96/EC | |
| Length | 6mm | |
| Height | 1.1mm | |
| Width | 4.21 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2011/65/EU and in accordance to WEEE 2002/96/EC | ||
Length 6mm | ||
Height 1.1mm | ||
Width 4.21 mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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