Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 107 A, 60 V Enhancement, 8-Pin PDFN56 TSM048NB06LCR
- RS-artikelnummer:
- 216-9661
- Tillv. art.nr:
- TSM048NB06LCR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
354,70 kr
(exkl. moms)
443,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 640 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 35,47 kr | 354,70 kr |
| 50 - 90 | 34,754 kr | 347,54 kr |
| 100 - 240 | 31,875 kr | 318,75 kr |
| 250 - 990 | 31,248 kr | 312,48 kr |
| 1000 + | 29,042 kr | 290,42 kr |
*vägledande pris
- RS-artikelnummer:
- 216-9661
- Tillv. art.nr:
- TSM048NB06LCR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 107A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS 2011/65/EU and WEEE 2002/96/EC | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 107A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS 2011/65/EU and WEEE 2002/96/EC | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
relaterade länkar
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- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
