ROHM Dual HP 2 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin HSOP HP8K24TB
- RS-artikelnummer:
- 215-9752
- Tillv. art.nr:
- HP8K24TB
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
107,52 kr
(exkl. moms)
134,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 10,752 kr | 107,52 kr |
| 50 - 90 | 10,539 kr | 105,39 kr |
| 100 - 240 | 7,986 kr | 79,86 kr |
| 250 - 990 | 7,818 kr | 78,18 kr |
| 1000 + | 6,518 kr | 65,18 kr |
*vägledande pris
- RS-artikelnummer:
- 215-9752
- Tillv. art.nr:
- HP8K24TB
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HP | |
| Package Type | HSOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 6 mm | |
| Height | 1.1mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HP | ||
Package Type HSOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 6 mm | ||
Height 1.1mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Rohm power MOSFET having voltage rating of 30V. It has low on resistance. It is mainly used in switching and DC-DC converter.
Pb free
RoHS compliant
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