Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0502NSIATMA1
- RS-artikelnummer:
- 214-8975
- Tillv. art.nr:
- BSC0502NSIATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
134,055 kr
(exkl. moms)
167,565 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 14 985 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 8,937 kr | 134,06 kr |
| 75 - 135 | 8,489 kr | 127,34 kr |
| 150 - 360 | 8,131 kr | 121,97 kr |
| 375 - 735 | 7,765 kr | 116,48 kr |
| 750 + | 7,235 kr | 108,53 kr |
*vägledande pris
- RS-artikelnummer:
- 214-8975
- Tillv. art.nr:
- BSC0502NSIATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 0.65V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 0.65V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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