Infineon OptiMOS 5 Type N-Channel MOSFET, 49 A, 80 V N, 8-Pin SuperSO BSC117N08NS5ATMA1
- RS-artikelnummer:
- 214-4328
- Tillv. art.nr:
- BSC117N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
173,955 kr
(exkl. moms)
217,44 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 13 605 enhet(er) från den 19 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 11,597 kr | 173,96 kr |
| 75 - 135 | 11,021 kr | 165,32 kr |
| 150 - 360 | 10,558 kr | 158,37 kr |
| 375 - 735 | 10,095 kr | 151,43 kr |
| 750 + | 9,401 kr | 141,02 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4328
- Tillv. art.nr:
- BSC117N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
relaterade länkar
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SuperSO BSC052N08NS5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO BSC016N06NSTATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO BSC065N06LS5ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V N, 8-Pin SuperSO