DiodesZetex Dual DMT47 1 Type N-Channel MOSFET, 30.2 A, 40 V Enhancement, 8-Pin PowerDI3333 DMT47M2LDV-7
- RS-artikelnummer:
- 206-0143
- Tillv. art.nr:
- DMT47M2LDV-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
217,35 kr
(exkl. moms)
271,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 14 september 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 8,694 kr | 217,35 kr |
| 50 - 75 | 8,521 kr | 213,03 kr |
| 100 - 225 | 7,428 kr | 185,70 kr |
| 250 - 975 | 7,226 kr | 180,65 kr |
| 1000 + | 7,056 kr | 176,40 kr |
*vägledande pris
- RS-artikelnummer:
- 206-0143
- Tillv. art.nr:
- DMT47M2LDV-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333 | |
| Series | DMT47 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.015Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.72nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 14.8W | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS, UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101 | |
| Width | 3.4 mm | |
| Height | 0.85mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333 | ||
Series DMT47 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.015Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.72nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 14.8W | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals RoHS, UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101 | ||
Width 3.4 mm | ||
Height 0.85mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 40V,8 pin dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.34 W thermal power dissipation.
High conversion efficiency
Low RDS(ON) – minimizes on state losses
Fast switching speed
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