DiodesZetex DMN10 Type N-Channel MOSFET, 3.7 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H170SFGQ-7
- RS-artikelnummer:
- 206-0073
- Tillv. art.nr:
- DMN10H170SFGQ-7
- Tillverkare / varumärke:
- DiodesZetex
Antal (1 förpackning med 25 enheter)*
124,55 kr
(exkl. moms)
155,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 275 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 + | 4,982 kr | 124,55 kr |
*vägledande pris
- RS-artikelnummer:
- 206-0073
- Tillv. art.nr:
- DMN10H170SFGQ-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMN10 | |
| Package Type | PowerDI3333 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 133mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26.7nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.25mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Width | 3.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMN10 | ||
Package Type PowerDI3333 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 133mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26.7nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.25mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Width 3.25 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 100V complementary pair enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management function.
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package
relaterade länkar
- DiodesZetex DMN10 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex Type N-Channel MOSFET 8-Pin PowerDI3333-8
- DiodesZetex DMT35M4LFVW Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI3333 DMT35M4LFVW-7
- DiodesZetex DMTH Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333 DMTH48M3SFVW-7
- DiodesZetex DMN10H220LFVW Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333 DMN10H220LFVW-7
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333 DMT6007LFG-7
- DiodesZetex DMTH43 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333 DMTH43M8LFG-7
- DiodesZetex DMG7430LFG Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI3333 DMG7430LFG-7
