onsemi NTB Type N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263 NTBG160N120SC1
- RS-artikelnummer:
- 205-2494
- Tillv. art.nr:
- NTBG160N120SC1
- Tillverkare / varumärke:
- onsemi
Antal (1 förpackning med 5 enheter)*
342,45 kr
(exkl. moms)
428,05 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 + | 68,49 kr | 342,45 kr |
*vägledande pris
- RS-artikelnummer:
- 205-2494
- Tillv. art.nr:
- NTBG160N120SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 19.5A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.9V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33.8nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.3mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 15.1mm | |
| Width | 9.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 19.5A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.9V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33.8nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.3mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 15.1mm | ||
Width 9.7 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
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