onsemi Dual N NTTF 1 Type N-Channel MOSFET, 38 A, 60 V Enhancement, 12-Pin WQFN NTTFD9D0N06HLTWG
- RS-artikelnummer:
- 202-5721
- Tillv. art.nr:
- NTTFD9D0N06HLTWG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
380,80 kr
(exkl. moms)
476,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 juni 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 75 | 15,232 kr | 380,80 kr |
| 100 - 225 | 13,126 kr | 328,15 kr |
| 250 + | 11,379 kr | 284,48 kr |
*vägledande pris
- RS-artikelnummer:
- 202-5721
- Tillv. art.nr:
- NTTFD9D0N06HLTWG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTTF | |
| Package Type | WQFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26W | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Forward Voltage Vf | 0.79V | |
| Transistor Configuration | Dual N | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTTF | ||
Package Type WQFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26W | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Forward Voltage Vf 0.79V | ||
Transistor Configuration Dual N | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Height 0.75mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
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