Vishay EF Type N-Channel MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 200-6795
- Tillv. art.nr:
- SiHP105N60EF-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
252,00 kr
(exkl. moms)
315,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 90 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 50,40 kr | 252,00 kr |
| 25 - 45 | 45,382 kr | 226,91 kr |
| 50 - 120 | 42,852 kr | 214,26 kr |
| 125 - 245 | 40,32 kr | 201,60 kr |
| 250 + | 37,788 kr | 188,94 kr |
*vägledande pris
- RS-artikelnummer:
- 200-6795
- Tillv. art.nr:
- SiHP105N60EF-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.52mm | |
| Standards/Approvals | No | |
| Width | 4.65 mm | |
| Height | 14.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.52mm | ||
Standards/Approvals No | ||
Width 4.65 mm | ||
Height 14.4mm | ||
Automotive Standard No | ||
The Vishay SiHP105N60EF-GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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