onsemi Type N-Channel MOSFET, 337 A, 80 V Enhancement, 8-Pin DFN NVMTS1D2N08H

Försörjningsbrist
På grund av en global utbudsbrist vet vi inte när detta kommer att finnas i lager igen.
Förpackningsalternativ:
RS-artikelnummer:
195-2677
Tillv. art.nr:
NVMTS1D2N08H
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

337A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

147nC

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

8.1mm

Height

1.15mm

Width

8 mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (8x8 mm)

Compact Design

Low RDS(on)

Minimize Conduction Losses

Low QG and Capacitance

Minimize Driver Losses

Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Application

Reverser Battery protection

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

relaterade länkar