onsemi NTMYS010N04CL Type N-Channel MOSFET, 38 A, 40 V Enhancement, 4-Pin LFPAK NTMYS010N04CLTWG
- RS-artikelnummer:
- 195-2531
- Tillv. art.nr:
- NTMYS010N04CLTWG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 30 enheter)*
780,75 kr
(exkl. moms)
975,93 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 08 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 30 - 90 | 26,025 kr | 780,75 kr |
| 120 - 270 | 22,43 kr | 672,90 kr |
| 300 + | 19,447 kr | 583,41 kr |
*vägledande pris
- RS-artikelnummer:
- 195-2531
- Tillv. art.nr:
- NTMYS010N04CLTWG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS010N04CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 17.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS010N04CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 17.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
relaterade länkar
- onsemi NTMYS010N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS010N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS010N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NVMYS010N04CLTWG
- onsemi NVMYS7D3N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS8D0N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS5D3N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMJS1D5N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NTMYS2D4N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK