onsemi NTMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK NTMYS5D3N04CTWG
- RS-artikelnummer:
- 195-2521
- Tillv. art.nr:
- NTMYS5D3N04CTWG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
303,175 kr
(exkl. moms)
378,975 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- Dessutom levereras 1 225 enhet(er) från den 05 januari 2026
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 75 | 12,127 kr | 303,18 kr |
| 100 - 225 | 10,456 kr | 261,40 kr |
| 250 + | 9,063 kr | 226,58 kr |
*vägledande pris
- RS-artikelnummer:
- 195-2521
- Tillv. art.nr:
- NTMYS5D3N04CTWG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS5D3N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS5D3N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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