onsemi NVMYS3D3N06CL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG

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RS-artikelnummer:
195-2513
Tillv. art.nr:
NVMYS3D3N06CLTWG
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

133A

Maximum Drain Source Voltage Vds

60V

Package Type

LFPAK

Series

NVMYS3D3N06CL

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

40.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

5mm

Width

4.25 mm

Height

1.15mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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