onsemi NVMYS3D3N06CL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG

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RS-artikelnummer:
195-2513
Tillv. art.nr:
NVMYS3D3N06CLTWG
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onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

133A

Maximum Drain Source Voltage Vds

60V

Series

NVMYS3D3N06CL

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

40.7nC

Maximum Power Dissipation Pd

100W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

5mm

Standards/Approvals

No

Width

4.25 mm

Height

1.15mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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