STMicroelectronics N-Channel MOSFET Transistor, 13 A, 3-Pin TO-220FP STF18N60M6
- RS-artikelnummer:
- 192-4652
- Tillv. art.nr:
- STF18N60M6
- Tillverkare / varumärke:
- STMicroelectronics
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- RS-artikelnummer:
- 192-4652
- Tillv. art.nr:
- STF18N60M6
- Tillverkare / varumärke:
- STMicroelectronics
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 16.8 nC @ 10 V | |
| Width | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.4mm | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 16.8 nC @ 10 V | ||
Width 4.6mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.4mm | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
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