DiodesZetex DMT Type N-Channel MOSFET, 82 A, 40 V Enhancement, 8-Pin PowerDI5060 DMTH43M8LPS-13
- RS-artikelnummer:
- 182-7454
- Tillv. art.nr:
- DMTH43M8LPS-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
96,44 kr
(exkl. moms)
120,55 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 januari 2027
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 9,644 kr | 96,44 kr |
| 100 - 240 | 7,717 kr | 77,17 kr |
| 250 - 490 | 7,022 kr | 70,22 kr |
| 500 - 990 | 6,81 kr | 68,10 kr |
| 1000 + | 6,63 kr | 66,30 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7454
- Tillv. art.nr:
- DMTH43M8LPS-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMT | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 38.5nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Length | 6mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMT | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 38.5nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Length 6mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Applications
BLDC Motors
DC-DC Converters
Load Switch
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