DiodesZetex DMP Type P-Channel MOSFET, 0.25 A, 450 V Enhancement, 4-Pin SOT-223 DMP45H150DHE-13
- RS-artikelnummer:
- 182-7409
- Tillv. art.nr:
- DMP45H150DHE-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
223,45 kr
(exkl. moms)
279,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 4 200 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 200 | 4,469 kr | 223,45 kr |
| 250 - 450 | 3,911 kr | 195,55 kr |
| 500 - 950 | 3,129 kr | 156,45 kr |
| 1000 - 1950 | 2,607 kr | 130,35 kr |
| 2000 + | 2,408 kr | 120,40 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7409
- Tillv. art.nr:
- DMP45H150DHE-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.25A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Package Type | SOT-223 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 59.4W | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.55mm | |
| Width | 3.55 mm | |
| Height | 1.65mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.25A | ||
Maximum Drain Source Voltage Vds 450V | ||
Package Type SOT-223 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 59.4W | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.55mm | ||
Width 3.55 mm | ||
Height 1.65mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- COO (Country of Origin):
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
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