DiodesZetex Dual 2 Type N-Channel Power MOSFET, 33.2 A, 60 V Enhancement, 8-Pin PowerDI5060 DMTH6016LPD-13
- RS-artikelnummer:
- 182-7321
- Tillv. art.nr:
- DMTH6016LPD-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
88,48 kr
(exkl. moms)
110,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 30 april 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 8,848 kr | 88,48 kr |
| 100 - 240 | 8,109 kr | 81,09 kr |
| 250 - 490 | 7,874 kr | 78,74 kr |
| 500 - 990 | 7,683 kr | 76,83 kr |
| 1000 + | 7,493 kr | 74,93 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7321
- Tillv. art.nr:
- DMTH6016LPD-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | 175°C | |
| Maximum Power Dissipation Pd | 37.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | AEC-Q101, J-STD-020, RoHS, UL 94V-0, MIL-STD-202 | |
| Height | 1.05mm | |
| Length | 5.85mm | |
| Width | 4.95 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature 175°C | ||
Maximum Power Dissipation Pd 37.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals AEC-Q101, J-STD-020, RoHS, UL 94V-0, MIL-STD-202 | ||
Height 1.05mm | ||
Length 5.85mm | ||
Width 4.95 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it deal for high-efficiency power management applications.
Rated to +175° C – Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Engine Management Systems
Body Control Electronics
DCDC Converters
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