DiodesZetex Dual 2 Type N, Type P-Channel MOSFET, 4.6 A, 30 V Enhancement, 6-Pin TSOT DMC3071LVT-7
- RS-artikelnummer:
- 182-7079
- Tillv. art.nr:
- DMC3071LVT-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
164,70 kr
(exkl. moms)
205,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 100 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 100 | 1,647 kr | 164,70 kr |
| 200 - 400 | 1,44 kr | 144,00 kr |
| 500 - 900 | 1,155 kr | 115,50 kr |
| 1000 - 1900 | 1,047 kr | 104,70 kr |
| 2000 + | 0,961 kr | 96,10 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7079
- Tillv. art.nr:
- DMC3071LVT-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 0.9mm | |
| Width | 1.7 mm | |
| Length | 3mm | |
| Standards/Approvals | UL 94V-0, J-STD-020, MIL-STD-202, RoHS, AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 0.9mm | ||
Width 1.7 mm | ||
Length 3mm | ||
Standards/Approvals UL 94V-0, J-STD-020, MIL-STD-202, RoHS, AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Backlighting
DC-DC Converters
Power Management Functions
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