DiodesZetex DMN6040SE Type N-Channel MOSFET, 7.1 A, 60 V Enhancement, 4-Pin SOT-223 DMN6040SE-13
- RS-artikelnummer:
- 182-7066
- Tillv. art.nr:
- DMN6040SE-13
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
115,15 kr
(exkl. moms)
143,95 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 100 enhet(er) är redo att levereras
- Dessutom levereras 850 enhet(er) från den 02 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 75 | 4,606 kr | 115,15 kr |
| 100 - 475 | 3,682 kr | 92,05 kr |
| 500 - 975 | 3,082 kr | 77,05 kr |
| 1000 - 1975 | 2,831 kr | 70,78 kr |
| 2000 + | 2,648 kr | 66,20 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7066
- Tillv. art.nr:
- DMN6040SE-13
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN6040SE | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.55 mm | |
| Height | 1.65mm | |
| Length | 6.55mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN6040SE | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.55 mm | ||
Height 1.65mm | ||
Length 6.55mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Transformer Driving Switch
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
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