DiodesZetex DMN Type N-Channel MOSFET, 0.5 A, 30 V Enhancement, 3-Pin SOT-23 DMN31D5L-7
- RS-artikelnummer:
- 182-7039
- Tillv. art.nr:
- DMN31D5L-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
109,70 kr
(exkl. moms)
137,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 100 | 1,097 kr | 109,70 kr |
| 200 - 400 | 0,962 kr | 96,20 kr |
| 500 - 900 | 0,771 kr | 77,10 kr |
| 1000 - 1900 | 0,70 kr | 70,00 kr |
| 2000 + | 0,644 kr | 64,40 kr |
*vägledande pris
- RS-artikelnummer:
- 182-7039
- Tillv. art.nr:
- DMN31D5L-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 520mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 520mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. Green Device
Applications
Motor Control
Power Management Functions
Backlighting
relaterade länkar
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMN3110S-7
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 DMN6075S-7
- DiodesZetex DMN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMN2075U-7
- DiodesZetex DMN Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-23 DMN10H220L-7
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 DMN6140L-7
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMN3404L-7
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
