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onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181

RS-artikelnummer:: 181-1895
Tillv. art.nr:: FDMS86181
Tillverkare / varumärke:: onsemi

onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181

Antal (1 förpackning med 5 enheter)*

47,30 kr

(exkl. moms)

59,10 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 2 990 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
5 +	9,46 kr	47,30 kr

*vägledande pris

RS-artikelnummer:: 181-1895
Tillv. art.nr:: FDMS86181
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	124A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PQFN
	Series	FDMS86181
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	42nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	5 mm
	Standards/Approvals	No
	Height	1.05mm
	Length	5.85mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 124A
	Maximum Drain Source Voltage Vds 100V
	Package Type PQFN
	Series FDMS86181
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 42nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 5 mm
	Standards/Approvals No
	Height 1.05mm
	Length 5.85mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A

Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A

ADD

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

This product is general usage and suitable for many different applications.

onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181

GRATIS leverans för online beställningar över 500,00 kr

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