onsemi Dual 2 Type N-Channel Power MOSFET, 42 A, 60 V Enhancement, 8-Pin DFN NTMFD5C674NLT1G
- RS-artikelnummer:
- 178-4629
- Tillv. art.nr:
- NTMFD5C674NLT1G
- Tillverkare / varumärke:
- onsemi
Antal (1 förpackning med 10 enheter)*
23,21 kr
(exkl. moms)
29,01 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 2 980 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 + | 2,321 kr | 23,21 kr |
*vägledande pris
- RS-artikelnummer:
- 178-4629
- Tillv. art.nr:
- NTMFD5C674NLT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | 175°C | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature 175°C | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low on resistance
High current capability
Small footprint (5x6 mm)
Benefits
Minimal conduction losses
Robust load performance
Compact Design
Applications
Motor Control
Synchronous DC to DC Regulator
Power Switches (High Side Driver,Low Side Driver, H-Bridges etc.)
Battery Management and Protection
End Products
Battery Packs
Power Supplies
Rotary Drones
Power Tools
Power Over Ethernet (PoE)
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