onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 178-4243
Tillv. art.nr:: FCP165N65S3
Tillverkare / varumärke:: onsemi

onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220

Antal (1 rör med 50 enheter)*

1 183,60 kr

(exkl. moms)

1 479,50 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 650 enhet(er), redo att levereras

Enheter	Per enhet	Per Rør*
50 +	23,672 kr	1 183,60 kr

*vägledande pris

RS-artikelnummer:: 178-4243
Tillv. art.nr:: FCP165N65S3
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	SUPERFET III
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	165mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	39nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	154W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Standards/Approvals	RoHS, Pb-Free, Halide Free
	Width	4.7 mm
	Height	16.3mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series SUPERFET III
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 165mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 39nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 154W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Standards/Approvals RoHS, Pb-Free, Halide Free
	Width 4.7 mm
	Height 16.3mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 39 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)

Internal Gate Resistance: 4.6 Ω

Optimized Capacitance

Typ. RDS(on) = 140 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consumer

Industrial

End Products:

Notebook / Desktop computer

Game Console

Telecom / Server

LCD / LED TV

LED Lighting / Ballast

Adapter

onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220

GRATIS leverans för online beställningar över 500,00 kr

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